APTM100UM65DAG APTM100UM65DAG C rev 3 october, 2012 www.microsemi.com 1 C 7 absolute maximum ratings these devices are sensitiv e to electrostatic discharge. proper handling procedures should be followe d. see application note apt0502 on www.microsemi.com symbol parameter max ratings unit v dss drain - source breakdown voltage 1000 v t c = 25c 145 i d continuous drain current t c = 80c 110 i dm pulsed drain current 580 a v gs gate - source voltage 30 v r dson drain - source on resistance 78 m ? p d maximum power dissipation t c = 25c 3250 w i ar avalanche current (repetitive and non repetitive) 30 a e ar repetitive avalanche energy 50 e as single pulse avalanche energy 3200 mj v dss = 1000v r dson = 65m ? typ @ tj = 25c i d = 145a @ tc = 25c application ? zero current switching resonant mode features ? power mos 7 ? mosfets - low r dson - low input and miller capacitance - low gate charge - avalanche energy rated - very rugged ? kelvin source for easy drive ? very low stray inductance - symmetrical design - m5 power connectors ? high level of integration ? aln substrate for improved thermal performance benefits ? outstanding performance at high frequency operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? low profile ? rohs compliant single switch with series diode mosfet power module downloaded from: http:///
APTM100UM65DAG APTM100UM65DAG C rev 3 october, 2012 www.microsemi.com 2 C 7 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit v gs = 0v,v ds = 1000v t j = 25c 400 a i dss zero gate voltage drain current v gs = 0v,v ds = 800v t j = 125c 2 ma r ds(on) drain C source on resistance v gs = 10v, i d = 72.5a 65 78 m ? v gs(th) gate threshold voltage v gs = v ds , i d = 20ma 3 5 v i gss gate C source leakage current v gs = 30 v, v ds = 0v 400 na dynamic characteristics symbol characteristic test conditions min typ max unit c iss input capacitance 28.5 c oss output capacitance 5.08 c rss reverse transfer capacitance v gs = 0v v ds = 25v f = 1mhz 0.9 nf q g total gate charge 1068 q gs gate C source charge 136 q gd gate C drain charge v gs = 10v v bus = 500v i d = 145a 692 nc t d(on) turn-on delay time 18 t r rise time 14 t d(off) turn-off delay time 140 t f fall time v gs = 15v v bus = 500v i d = 145a r g = 0.75 ? 55 ns e on turn-on switching energy 4.8 e off turn-off switching energy inductive switching @ 25c v gs = 15v, v bus = 670v i d = 145a, r g = 0.75 ? 2.9 mj e on turn-on switching energy 8 e off turn-off switching energy inductive switching @ 125c v gs = 15v, v bus = 670v i d = 145a, r g = 0.75 ? 3.9 mj series diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1000 v t j = 25c 750 i rm maximum reverse leakage current v r =1000v t j = 125c 1000 a i f dc forward current tc = 80c 240 a i f = 240a 2 2.5 i f = 480a 2.2 v f diode forward voltage i f = 240a t j = 125c 1.7 v t j = 25c 280 t rr reverse recovery time t j = 125c 350 ns t j = 25c 3.04 q rr reverse recovery charge i f = 240a v r = 667v di/dt = 800a/s t j = 125c 14.4 c downloaded from: http:///
APTM100UM65DAG APTM100UM65DAG C rev 3 october, 2012 www.microsemi.com 3 C 7 thermal and package characteristics symbol characteristic min typ max unit transistor 0.038 r thjc junction to case thermal resistance series diode 0.23 c/w v isol rms isolation voltage, any terminal to case t =1 min, 50/60hz 4000 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c to heatsink m6 3 5 torque mounting torque for teminals m5 2 3.5 n.m wt package weight 300 g sp6 package outline (dimensions in mm) see application note apt0601 - mounting instructio ns for sp6 power modules on www.microsemi.com downloaded from: http:///
APTM100UM65DAG APTM100UM65DAG C rev 3 october, 2012 www.microsemi.com 4 C 7 typical performance curve 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0.04 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration 5v 5.5v 6v 6.5v 7v 0 40 80 120 160 200 240 280 320 360 0 5 10 15 20 25 30 v ds , drain to source voltage (v) i d , drain current (a) v gs =15, 10v low voltage output characteristics transfert characteristics t j =-55c t j =25c t j =125c 0 80 160 240 320 400 480 012345678 v gs , gate to source voltage (v) i d , drain current (a) v ds > i d (on)xr ds (on)max 250s pulse test @ < 0.5 duty cycle r ds(on) vs drain current v gs =10v v gs =20v 0.8 0.9 1 1.1 1.2 1.3 1.4 0 80 160 240 320 i d , drain current (a) r ds (on) drain to source on resistance normalized to v gs =10v @ 72.5a 0 40 80 120 160 25 50 75 100 125 150 t c , case temperature (c) i d , dc drain current (a) dc drain current vs case temperature downloaded from: http:///
APTM100UM65DAG APTM100UM65DAG C rev 3 october, 2012 www.microsemi.com 5 C 7 0.85 0.90 0.95 1.00 1.05 1.10 1.15 -50 -25 0 25 50 75 100 125 150 t j , junction temperature (c) bv dss , drain to source breakdown voltage (normalized) breakdown voltage vs temperature on resistance vs temperature 0.0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150 t j , junction temperature (c) r ds (on), drain to source on resistance (normalized) v gs =10v i d =72.5a threshold voltage vs temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 t c , case temperature (c) v gs (th), threshold voltage (normalized) maximum safe operating area 10ms 1ms 100s 1 10 100 1000 1 10 100 1000 v ds , drain to source voltage (v) i d , drain current (a) limited by r ds on single pulse t j =150c t c =25c ciss crss coss 100 1000 10000 100000 01 02 03 04 05 0 v ds , drain to source voltage (v) c, capacitance (pf) capacitance vs drain to source voltage v ds =200v v ds =500v v ds =800v 0 2 4 6 8 10 12 14 0 300 600 900 1200 1500 gate charge (nc) v gs , gate to source voltage (v) gate charge vs gate to source voltage i d =145a t j =25c downloaded from: http:///
APTM100UM65DAG APTM100UM65DAG C rev 3 october, 2012 www.microsemi.com 6 C 7 delay times vs current t d(on) t d(off) 0 40 80 120 160 50 94 138 182 226 270 i d , drain current (a) t d(on) and t d(off) (ns) v ds =670v r g =0.75 ? t j =125c l=100h rise and fall times vs current t r t f 0 20 40 60 80 100 50 94 138 182 226 270 i d , drain current (a) t r and t f (ns) v ds =670v r g =0.75 ? t j =125c l=100h switching energy vs current e on e off 0 2 4 6 8 10 12 14 16 50 94 138 182 226 270 i d , drain current (a) switching energy (mj) v ds =670v r g =0.75 ? t j =125c l=100h e on e off e off 2 6 10 14 18 22 26 012345678 gate resistance (ohms) switching energy (mj) switching energy vs gate resistance v ds =670v i d =145a t j =125c l=100h hard switching zcs 0 50 100 150 200 250 300 15 35 55 75 95 115 135 i d , drain current (a) frequency (khz) operating frequency vs drain current v ds =670v d=50% r g =0.75 ? t j =125c t c =75c t j =25c t j =150c 1 10 100 1000 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 v sd , source to drain voltage (v) i dr , reverse drain current (a) source to drain diode forward voltage downloaded from: http:///
APTM100UM65DAG APTM100UM65DAG C rev 3 october, 2012 www.microsemi.com 7 C 7 disclaimer the information contained in the document (unless it is publicly available on the web without access restrictions) is proprietary and confidential information of microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of microsemi. if the recipient of this document has entered into a disclosure agreement with microsemi, then the ter ms of such agreement will also apply. this document and the information contained herein may not be modified, by any person other than authorized personnel of microsemi. no license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication , inducement, estoppels or otherwise. any license under such intellectual property rights must be approved by microsemi in writing signed by an officer of microsemi. microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. this product has been subject to limited testing and should not be used in conjunction with life- support or other mission-critical equipment or applications. microsemi assumes no liability whatsoever, and microsemi disclaims any express or implied warranty, relating to sale and/or use of microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or custo mers final application. user or customer shall not rely on any data and performance specifications or parameters provided by microsemi. it is the customers and users responsibility to independently determine suitability of any microsemi product and to test and verify the same. the information contained herein is provided as is, where is and with all faults, and the entire risk associated with such information is entirely with the user. microsemi specifically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. the product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp life support application seller's products are not designed, intended, or authorized for use as components in systems intended for space, aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other application in which the failure of the seller's product could create a situation where personal injury, death or property damage or loss may occur (collectively "life support applications"). buyer agrees not to use products in any life support applications and to the extent it does it shall conduct extensive testing of the product in such applications and further agrees to indemnify and hold seller, and its officers, employees, subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, dam ages and expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage or otherwise associated with the use of the goods in life support applications, even if such claim includes allegations that seller was negligent regarding the design or manufacture of the goods. buyer must notify seller in writing before using sellers products in life support applications. seller will study with buyer alternative solutions to meet buyer application specification based on sellers sales conditions applicable for the new proposed specific part. downloaded from: http:///
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